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FDD850N10L

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FDD850N10L

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.5V @ 250µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs : 28.9 nC @ 10 V

Rds On (Max) @ Id, Vgs : 75mOhm @ 12A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1465 pF @ 25 V

Mounting Type : Surface Mount

Series : PowerTrench®

Supplier Device Package : TO-252AA

Mfr : onsemi

Current - Continuous Drain (Id) @ 25°C : 15.7A (Tc)

Power Dissipation (Max) : 50W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : FDD850

Description : MOSFET N-CH 100V 15.7A DPAK

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N-Channel 100 V 15.7A (Tc) 50W (Tc) Surface Mount TO-252AA

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