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IRFBC20PBF

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IRFBC20PBF

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-220-3

Gate Charge (Qg) (Max) @ Vgs : 18 nC @ 10 V

Rds On (Max) @ Id, Vgs : 4.4Ohm @ 1.3A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 600 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 350 pF @ 25 V

Mounting Type : Through Hole

Series : -

Supplier Device Package : TO-220AB

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 2.2A (Tc)

Power Dissipation (Max) : 50W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IRFBC20

Description : MOSFET N-CH 600V 2.2A TO220AB

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N-Channel 600 V 2.2A (Tc) 50W (Tc) Through Hole TO-220AB

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