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BSZ110N06NS3GATMA1

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BSZ110N06NS3GATMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 23µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : 8-PowerVDFN

Gate Charge (Qg) (Max) @ Vgs : 33 nC @ 10 V

Rds On (Max) @ Id, Vgs : 11mOhm @ 20A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 60 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 2700 pF @ 30 V

Mounting Type : Surface Mount

Series : OptiMOS™

Supplier Device Package : PG-TSDSON-8

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 20A (Tc)

Power Dissipation (Max) : 2.1W (Ta), 50W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : BSZ110

Description : MOSFET N-CH 60V 20A 8TSDSON

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N-Channel 60 V 20A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8

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