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Transistor Polarity : P-Channel
Technology : Si
Id - Continuous Drain Current : - 20 A
Mounting Style : Through Hole
Minimum Operating Temperature : - 40 C
Package / Case : TO-251-3
Maximum Operating Temperature : + 175 C
Channel Mode : Enhancement
Vds - Drain-Source Breakdown Voltage : - 55 V
Packaging : Tube
Vgs th - Gate-Source Threshold Voltage : - 1 V
Product Category : MOSFET
Rds On - Drain-Source Resistance : 170 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : +/- 20 V
Qg - Gate Charge : 31 nC
Manufacturer : IR / Infineon
Description : MOSFET PLANAR_MOSFETS
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